jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 1 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol mdp 15n60g mdf 15n60g unit drain - source voltage v dss 600 v gate - source voltage v gss 30 v continuous drain current t c =2 5 o c i d 15 15 * a t c = 10 0 o c 9.5 9.5 * a pulsed drain current ( 2 ) i dm 60 60 * a power dissipation t c =25 o c p d 231. 4 36.7 w derate above 25 o c 1.85 0.29 w/ o c repetitive avalanche energy ( 2 ) e ar 2 3.1 mj peak diode recovery dv/dt (3) d v/dt 4.5 v/ns si ngle pulse avalanche energy (4) e as 511 mj junction and storage temperature range t j , t stg - 55~150 o c * id limited by maximum junction temperature thermal characteristics characteristics symbol mdp 15n60g mdf 15n60g unit thermal resistance, junction - to - ambient (1) r ja 62.5 62.5 o c/w thermal resistance, junction - to - case (1) r jc 0. 54 3.4 md p 15n60g / md f 15n60g n - channel mosfet 600 v, 1 5 a, 0.4 0 ? general description the se n - channel mosfet are produced using advanced magna ch ips mosfet technology, which provides low on features ? ds = 600 v ? d = 15 a @ v gs = 10v ? ds(on) gs = 10v applications ? ? ? to - 220f mdf series to - 220 mdp series d g s
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 2 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v ordering information p art number temp. range package packing rohs status mdp 15n60g th - 55~150 o c to - 220 tube halogen free mdf 15n60g th - 55~150 o c to - 220 f tube halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 3 .0 - 5 .0 drain cut - off current i dss v ds = 6 00 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 30 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds(on) v gs = 10v, i d = 7.5 a - 0. 34 0.4 0 forward transconductance g fs v ds = 30 v, i d = 7 .5 a ( 2 ) - 11.5 - s dynamic characteristics total gate charge q g v ds = 480 v, i d = 1 5 .0 a, v gs = 10v ( 2 ) - 49.0 - nc gate - source charge q gs - 15.0 - gate - drain charge q gd - 19.1 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 2311 - pf reverse transfer capacitance c rss - 10.8 - output capacitance c oss - 258 - turn - on delay time t d(on) v gs = 10v, v ds = 3 00 v, i d = 1 5 .0 a, r g = 25 ( 2 ) - 57 - ns rise time t r - 86 - turn - off delay time t d(off) - 137 - fall time t f - 47 - drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 1 5 - a source - drain diode forward vol tage v sd i s = 15 .0 a , v gs = 0v - - 1. 4 v body diode reverse recovery time t rr i f = 15 . 0 a, dl/dt = 100a/s - 382 - ns body diode reverse recovery charge q rr - 4.47 - c note : 1. p ulse width is based on r j c & r j a and the maximum allowed juncti on temperature of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature t j(max) =150 c. 3. i s d 1 5 a , di/dt 200a/us, v dd bvdss , r g =25 , starting t j =25 c 4. l= 7. 9 m h, i as = 1 5 .0 a , v dd =50v, r g =25 , starting t j =25 c ,
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 3 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with sourc e current and temperature 4 6 8 10 10 -55 25 150 * notes ; 1. vds=30v i d (a) v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 25 150 notes : 1. v gs = 0 v 2.250 ? s pulse test i dr reverse drain current [a] v sd , source-drain voltage [v] 5 10 15 20 0 10 20 30 40 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =7.5v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] 9 12 15 18 21 24 27 30 33 36 39 42 45 0.3 0.4 0.5 0.6 0.7 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 7.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c]
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 4 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v fig. 7 gate charge characte ristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area mdp 15n60g (to - 220) fig. 11 transient thermal response curve mdp 15n60g (to - 220) fig. 1 2 transient thermal response curve mdf 15n60g (to - 220f) fig. 10 maximum safe operating area mdf 15n60g (to - 220f) 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.54 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 10 20 30 40 50 0 2 4 6 8 10 120v 300v 480v note : i d = 15.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1s 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =3.4 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 1 10 0 1000 2000 3000 4000 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 5 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v fig. 15 maximum drain current v s. case temperature fig .1 3 single pulse maximum power dissipation mdp 15n60g (to - 220) fig .1 4 single pulse maximu m power dissipation mdf 15n60g (to - 220f) 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 3000 6000 9000 12000 15000 18000 21000 24000 27000 single pulse r thjc = 0.54 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 i d , drain current [a] t c , case temperature [ ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 single pulse r thjc = 3.4 t c = 25 power (w) pulse width (s)
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 6 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v physical dimensions 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 7 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v physical dimensions 3 leads , to - 220f dimensions are in millimeters unless otherwise specified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
jun . 20 1 1 version 1 . 1 magnachip semiconductor ltd . 8 md p 15n60g / mdf 15n60g n - c hannel mosfet 6 0 0 v disclaimer: the products are not designed for use in hostile environments, including, w ithout limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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